continental device india limited data sheet page 1 of 3 npn silicon planar epitaxial transistors designed for general purpose medium power amplifier and switching circuits. absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings absolute maximum ratings rating symbol 2n6714 2n6714 2n6714 2n6714 2n6714 2N6715 2N6715 2N6715 2N6715 2N6715 2n6716 2n6716 2n6716 2n6716 2n6716 units collector-emitter voltage v ceo 30 40 60 v collector-base voltage v cbo 40 50 60 v emitter-base voltage v ebo - 5.0 - v collector current ? continuous i c - 1.5 - a power dissipation @ ta=25oc p d - 850 - mw operating and storage junction t j ,t stg -55 to +150 o c temperature range 2n6714 2N6715 2n6716 1 = emitter 2 = base 3 = collector 1 2 3 is / iecqc 700000 is / iec q c 750100 is/iso 9002 lic# q sc/l- 000019.2 continental device india limited an is/iso 9002 and iecq certified manufacturer e b c to-237 plastic package
continental device india limited data sheet page 2 of 3 electrical characteristics electrical characteristics electrical characteristics electrical characteristics electrical characteristics (ta =25oc unless otherwise specified) description description description description description symbol symbol symbol symbol symbol min. min. min. min. min. max. max. max. max. max. unit unit unit unit unit collector cutoff current v cb =40v, i e =0 2n6714 2n6714 2n6714 2n6714 2n6714 i cbo - 100 na v cb =50v, i e =0 2N6715 2N6715 2N6715 2N6715 2N6715 - 100 na v cb =40v, i e =0 2n6716 2n6716 2n6716 2n6716 2n6716 - 100 na d.c. current gain i c =10ma, v ce =1v 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 h fe 55 - i c =100ma, v ce =1v 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 60 - i c =1a, v ce =1v 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 50 250 i c =50ma, v ce =1v 2n6716 2n6716 2n6716 2n6716 2n6716 80 - i c =250ma, v ce =1v 2n6716 2n6716 2n6716 2n6716 2n6716 50 250 i c =500ma, v ce =1v 2n6716 2n6716 2n6716 2n6716 2n6716 20 - collector-emitter saturation voltage i c =1a, i b =100ma 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 v ce(sat) - 0.5 v i c =250ma, i b =25ma 2n6716 2n6716 2n6716 2n6716 2n6716 - 0.35 v base emitter on voltage i c =1a, v ce =1v 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 2n6714/6715 v be(on) - 1.2 v dynamic characteristics dynamic characteristics dynamic characteristics dynamic characteristics dynamic characteristics output capacitance v cb =10v, i e =0, all all all all all c ob -20pf f=1mhz current-gain-bandwidth product i c =50ma, v ce =1v 2n6714/6716 2n6714/6716 2n6714/6716 2n6714/6716 2n6714/6716 f t 50 500 mhz 2N6715 2N6715 2N6715 2N6715 2N6715 50 400 mhz 2n6714 2N6715 2n6716
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